RIE

Principle and app lications

The RIE process (reactive ion etching) is a dry etching process used in electronic and microelectronic manufacturing. Applications are for example fast and ultra high surface cleaning, surface activation, photo-resist stripping and semiconductor etching. 

For this process usually a planar plate reactor is used (see figure 1). After generating a gas atmosphere with a pressure of 10-2 to 10-1 mbar the gas discharge (plasma) is ignited by applying an RF voltage. Caused by the different mobility of light electrons and heavy ions in the electric field, a negative DC potential builds up at the smaller electrode (substrate carrier). This self bias potential usually is about 10 to a few hundred volts. 

The etching effect to the substrate (wafer, PCB etc.) is the sum of at least two processes, a physical and a chemical one:

  1. Chemical etching / removal of the substrate surface or contami-nation by reaction with reactive gas particles generated in the plasma (plasma etching).
  2. Physical etching of the surface by transfer of direct momentum of heavy ions which are accelerated in the electric field (sputter etching)

The RIE process combines the advantages of both effects - high selectivity, high etching rate and an-isotropic etching. 


files/aurion/images/plasma-alt/e_abb1_400.gif

 

THE SYSTEMS

Based on the know-how and lots of experience in RF technology AURION has developed a series of very flexible RIE systems with an outstanding cost-performance ratio. The range of products offered contains three system sizes for different substrates, throughput and etching rates. According to the high capacity of up to 25 wafers (Ø 150 mm) or 20 wafers (Ø 200 mm) and despite a small footprint (max. 1.5 m² in the clean room) a throughput of more than 100,000 wafers per year is possible even without an expensive automatic handling system. This is very interesting, not only for companies with a small capital budget. 


files/aurion/images/plasma-alt/tab1_tn.gif

 

FEATURES

  • Vacuum chamber made of stainless steel or aluminum
  • Vacuum pumps for corrosive gases including oil mist filter and oil return system
  • Gas inlet system with up to 4 mass flow controllers
  • Tailor made gas shower for optimised distribution
  • Pressure measurement with capacitive or Pirani gauge (depending on the requirements)
  • Impedance matching of the RF power through matching networks with automatic tuning designed and manufactured by AURION
  • Power-Split (when using more than one cathode)
  • DC bias control for equal bias potential at more than one cathode
  • Semiautomatic or PC control including data logging

CYLOS 160/RIE

CYLOS 350/RIE

General data

Dimensions (without pumps)
(width x length x height):
 0.55 x 0.6 x 1.4 m
Chamber volume: 0.015 m³
Supply voltage: 3/N/PE AC 400/230V
Cathode diameter: 220 mm
Number of cathodes: 1
Gas supply: Up to 4 mass flow controllers with a flow rate of up to 50 sccm / min. each
 


RF generator + matching

Frequency: 13.56 MHz
Output power: 0 - 300 W
Reflected power: max. 2%
 


Vacuum pump

Dimensions
(length x width x height):
 0.62 x 0.38 x 0.34 m
Pumping capacity: 35 m³/h
Base pressure: 1 x 10-3 mbar

CYLOS 350/RIE

Grafik vergrößern

CYLOS 350/RIE (space assignment plan with standard vacuum pump)

Grafik vergrößern


CYLOS 350/RIE (space assignment plan with integrated vacuum pump)

 

 

KIVOS 500/RIE

General data

Dimensions (without pumps)
(width x length x height):
 1.2 x 1.2 x 1.94 m
Chamber volume: 0.275 m³
Supply voltage: 3/N/PE AC 400/230V
Cathode area: 400 x 400 mm
Number of cathodes: 1 or 3
Gas supply: Up to 4 mass flow controllers with a flow rate of up to 200 sccm / min. each
 

RF generator + matching

Frequency: 13.56 MHz
Output power: 0 - 600 W (1 cath.)
0 - 1600 W (3 cath.)
Reflected power: max. 2%
 

Vacuum pump

Dimensions
(length x width x height):
 1 x 0.6 x 0.9 m
Pumping capacity: 220 m³/h
Base pressure: 1 x 10-3 mbar
 

Grafik vergrößern

KIVOS 550/RIE (space assignment plan for high class clean-rooms)

Grafik vergrößern

KIVOS 550/RIE (space assignment plan for low class clean-rooms)

 

 

KIVOS 750/RIE

General data

Dimensions (without pumps)
(width x length x height):
 1.2 x 1.3 x 2.14 m
Chamber volume: 0.625 m³
Supply voltage: 3/N/PE AC 400/230V
Cathode area: 500 x 500 mm
Number of cathodes: 1, 3 or 5
Gas supply: Up to 4 mass flow controllers with a flow rate of up to 200 sccm / min. each
 


RF generator + matching

Frequency: 13.56 MHz
Output power: 0 - 600 W (1 cath.)
0 - 1600 W (3 cath.)
0 - 2500 W (5 cath.)
Reflected power: max. 2%
 


Vacuum pump

Dimensions
(length x width x height):
 1 x 0.6 x 0.9 m
Pumping capacity: 410 m³/h
Base pressure: 1 x 10-3 mbar
 
KIVOS 750/RIE    KIVOS 750/RIE
Grafik vergrößern
KIVOS 750/RIE (space assignment plan for high class clean-rooms) 
Grafik vergrößern
KIVOS 750/RIE (space assignment plan for low class clean-rooms)
  



Download

Soon you can download a demo version of the control software from this page.